The IXYP15N65C3D1M is a 650V IGBT with an integrated fast diode, designed for 20-60 kHz switching applications such as power inverters, UPS, motor drives, and PFC circuits. It is packaged in an overmolded TO-220 case with an electrically isolated tab and weighs 2.5 g. The device has a continuous collector current rating of 9 A at 110°C and a maximum collector-emitter voltage of 650 V. It features a collector-emitter saturation voltage of 1.96 V (typical) at 15 A and 15 V gate-emitter voltage, with a thermal resistance junction-to-case of 2.63 °C/W. The IGBT is avalanche rated, has a square reverse bias safe operating area, and supports short-circuit operation up to 8 µs. It meets a 2500 V~ isolation rating and operates with a junction temperature range of -55°C to 175°C.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYP15N65C3D1M |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYP15N65C3D1M |
| VCES | 650 volts |
