The IXXH30N65C4D1 is a 650 V IGBT with a 30 A continuous collector current, designed for switching applications between 20-60 kHz. It is packaged in a TO-247 AD case and includes an anti-parallel fast recovery diode. The device has a collector-emitter saturation voltage of 2.50 V at 30 A and 15 V gate-emitter voltage, and a short-circuit withstand time of 10 μs. Thermal resistance from junction to case is 0.65 °C/W for the IGBT and 0.75 °C/W for the diode. The rated junction temperature range is -55 °C to 175 °C. It features a square reverse bias safe operating area and is optimized for hard-switching applications such as power inverters, UPS, motor drives, and PFC circuits.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXH30N65C4D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Trench - IXXH30N65C4D1 |
| VCES | 650 volts |
