Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYA20N65C3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYA20N65C3 is a 650V IGBT in a TO-263 AA package, designed for 20-60 kHz switching applications. It has a continuous collector current rating of 20A at 110°C and a peak pulse current of 105A at 25°C for 1ms. The device features a square reverse-bias safe operating area, avalanche capability, and short-circuit withstand time of 10μs at 150°C. Collector-emitter saturation voltage is 2.50V at 20A and 15V gate drive. Thermal resistance junction-to-case is 0.65°C/W. It is rated for operation from -55°C to 175°C and meets RoHS standards. The TO-263 AA package weighs 2.5g and has dimensions of 9.65mm x 10.41mm x 4.83mm.

Datasheet Summary
Powered by GS/AI

The IXYA20N65C3 is a 650V IGBT in a TO-263 AA package, designed for 20-60 kHz switching applications. It has a continuous collector current rating of 20A at 110°C and a peak pulse current of 105A at 25°C for 1ms. The device features a square reverse-bias safe operating area, avalanche capability, and short-circuit withstand time of 10μs at 150°C. Collector-emitter saturation voltage is 2.50V at 20A and 15V gate drive. Thermal resistance junction-to-case is 0.65°C/W. It is rated for operation from -55°C to 175°C and meets RoHS standards. The TO-263 AA package weighs 2.5g and has dimensions of 9.65mm x 10.41mm x 4.83mm.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYA20N65C3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYA20N65C3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYA20N65C3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYA20N65C3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
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