Littelfuse, Inc. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| "Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. | |
| As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low... | |
| Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise... | |
| Description: Ultra Junction X4 86A/94A, 200V, MOSFET Low Qg Low Rdson High power dispassion High Eas | |
| Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and... | |
| Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability... | |
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Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGA48N60B3 -- IXGA48N60B3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGH20N120B -- IXGH20N120B
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGH28N120B -- IXGH28N120B
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGH30N60B2 -- IXGH30N60B2
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGH35N120B -- IXGH35N120B
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGH56N60B3 -- IXGH56N60B3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGH64N60B3 -- IXGH64N60B3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGH72N60B3 -- IXGH72N60B3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGK120N60B -- IXGK120N60B
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGP48N60B3 -- IXGP48N60B3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGR120N60B -- IXGR120N60B
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGR48N60B3 -- IXGR48N60B3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGT50N90B2 -- IXGT50N90B2
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGT64N60B3 -- IXGT64N60B3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGT72N60B3 -- IXGT72N60B3
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GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. |
| Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. | |
| NPT IGBTs feature square RBSOA and 10 us short circuit withstand capability. They have positive temp coefficient of Vce(sat), ideal for paralleling. They are preferred for motor drive applications. These... | |
| P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads... | |
| Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift... | |
| Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts,... | |
| Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to... | |
| Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ | |
| Polar2™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to... | |
| Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated... | |
| Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating... | |
| The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. | |
| The high-performance ceramic substrate based isolated package offers inherent isolation, higher thermal conductivity and reduces thermal resistance junction-to-heatsink while remaining industry standard footprint compatible. These SiC MOSFETs are engineered to... | |
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Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGA28N60A3 -- IXGA28N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGA36N60A3 -- IXGA36N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH28N60A3 -- IXGH28N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH36N60A3 -- IXGH36N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH56N60A3 -- IXGH56N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH64N60A3 -- IXGH64N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGM25N100A -- IXGM25N100A
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN72N60A3 -- IXGN72N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGP28N60A3 -- IXGP28N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGR64N60A3 -- IXGR64N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGR72N60A3 -- IXGR72N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGT64N60A3 -- IXGT64N60A3
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The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS,... |
| The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. | |
| The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits... | |
| The new 200V X4-Class Ultra Junction MOSFETs are available with 120A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) leading to an improvement... | |
| The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit... | |
| The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They... | |
| The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. | |
| The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the... | |
| These 40V TrenchT4™ Power MOSFETs constitute a new generation of high-current Trench devices. Available at either 270A or 340A current rating, they are optimized for synchronous rectification in switched-mode power... | |
| These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance... | |
| These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these... | |
| These IXTA130N15X4A devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state... | |
| These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. | |
| This family of 1700V IGBTs are rugged NPT devices targeted for high voltage applications, requiring 10us short circuit withstand capability. They are particularly suitable for high voltage switching applications. We... | |
| Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating... | |
| Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved... | |
| Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. | |
| When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the... |
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