Littelfuse, Inc. Ignition IGBT 18 A, 450 V LGD18N45TH

Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint and Increased Board Space Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short-Circuit Protection Lead-free
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Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint and Increased Board Space Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short-Circuit Protection Lead-free
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Datasheet
Datasheet Summary
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The LGD18N45TH is a 450 V, 18 A N-channel ignition IGBT in a DPAK package with dimensions of 6.22 mm maximum length, 6.73 mm maximum width, and 10.41 mm maximum height, designed for high-voltage, high-current switching in ignition and direct fuel injection systems. It features a low threshold voltage for logic-level interfacing, low saturation voltage, and emitter ballasting for short-circuit protection. The device is AEC-Q101 qualified, has a thermal resistance of 1.3 °C/W junction-to-case and 95 °C/W junction-to-ambient on a minimal FR4 board, and can withstand a continuous collector current of 18 A with a pulsed current capability of 50 A. Maximum junction temperature is 175 °C, and it supports single-pulse avalanche energy up to 420 mJ under specified conditions.

Datasheet Summary
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The LGD18N45TH is a 450 V, 18 A N-channel ignition IGBT in a DPAK package with dimensions of 6.22 mm maximum length, 6.73 mm maximum width, and 10.41 mm maximum height, designed for high-voltage, high-current switching in ignition and direct fuel injection systems. It features a low threshold voltage for logic-level interfacing, low saturation voltage, and emitter ballasting for short-circuit protection. The device is AEC-Q101 qualified, has a thermal resistance of 1.3 °C/W junction-to-case and 95 °C/W junction-to-ambient on a minimal FR4 board, and can withstand a continuous collector current of 18 A with a pulsed current capability of 50 A. Maximum junction temperature is 175 °C, and it supports single-pulse avalanche energy up to 420 mJ under specified conditions.

Suppliers

Company
Product
Description
Supplier Links
Ignition IGBT 18 A, 450 V - LGD18N45TH - Littelfuse, Inc.
Rosemont, IL, United States
Ignition IGBT 18 A, 450 V
LGD18N45TH
Ignition IGBT 18 A, 450 V LGD18N45TH
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint and Increased Board Space Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short-Circuit Protection Lead-free

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint and Increased Board Space Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short-Circuit Protection Lead-free

Supplier's Site Datasheet
Single IGBTs - 18-LGD18N45THTR-ND - DigiKey
Thief River Falls, MN, United States
IGBT

IGBT

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Technical Specifications

  Littelfuse, Inc. DigiKey
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number LGD18N45TH 18-LGD18N45THTR-ND
Product Name Ignition IGBT 18 A, 450 V Single IGBTs
VCE(on) 2.07 volts
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