Littelfuse, Inc. Ignition IGBT 18 A, 450 V LGD18N45TH

Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint and Increased Board Space Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short-Circuit Protection Lead-free
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Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint and Increased Board Space Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short-Circuit Protection Lead-free
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Suppliers

Company
Product
Description
Supplier Links
Ignition IGBT 18 A, 450 V - LGD18N45TH - Littelfuse, Inc.
Rosemont, IL, United States
Ignition IGBT 18 A, 450 V
LGD18N45TH
Ignition IGBT 18 A, 450 V LGD18N45TH
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint and Increased Board Space Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short-Circuit Protection Lead-free

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint and Increased Board Space Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short-Circuit Protection Lead-free

Supplier's Site Datasheet
Single IGBTs - 18-LGD18N45THTR-ND - DigiKey
Thief River Falls, MN, United States
IGBT

IGBT

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Technical Specifications

  Littelfuse, Inc. DigiKey
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number LGD18N45TH 18-LGD18N45THTR-ND
Product Name Ignition IGBT 18 A, 450 V Single IGBTs
VCE(on) 2.07 volts
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