Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
IGBT 4500V 32A ISOPLUS I4PAK
| Littelfuse, Inc. | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYF40N450 | 18-IXYF40N450-ND | IXYF40N450 |
| Product Name | 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| VCES | 4500 volts | ||
| VCE(on) | 3.9 volts | ||
| IC(max) | 60 amps |
