Littelfuse, Inc. 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IXYF40N450

Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
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Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
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Datasheet
Datasheet Summary
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The IXYF40N450 is a high-voltage IGBT designed for switch-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits, and AC switches. It is packaged in an ISOPLUS i4-PakTM case with an electrically isolated tab, weighing 5 g. The device has a collector-emitter voltage rating of 4500 V, a continuous collector current of 32 A at 110°C, and a peak collector current of 350 A for 1 ms. It features a low saturation voltage of 3.2 to 3.9 V at 40 A and 15 V gate drive, and a thermal resistance of 0.43 °C/W from junction to case. The operating junction and storage temperature range is -55 °C to 150 °C, and it supports 4000 V AC electrical isolation. The IGBT utilizes silicon on direct-copper bond substrate technology and meets thermal shock requirements up to 300 °C for 10 seconds.

Datasheet Summary
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The IXYF40N450 is a high-voltage IGBT designed for switch-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits, and AC switches. It is packaged in an ISOPLUS i4-PakTM case with an electrically isolated tab, weighing 5 g. The device has a collector-emitter voltage rating of 4500 V, a continuous collector current of 32 A at 110°C, and a peak collector current of 350 A for 1 ms. It features a low saturation voltage of 3.2 to 3.9 V at 40 A and 15 V gate drive, and a thermal resistance of 0.43 °C/W from junction to case. The operating junction and storage temperature range is -55 °C to 150 °C, and it supports 4000 V AC electrical isolation. The IGBT utilizes silicon on direct-copper bond substrate technology and meets thermal shock requirements up to 300 °C for 10 seconds.

Suppliers

Company
Product
Description
Supplier Links
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs - IXYF40N450 - Littelfuse, Inc.
Rosemont, IL, United States
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs
IXYF40N450
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IXYF40N450
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages

Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages

Supplier's Site Datasheet
Single IGBTs - 18-IXYF40N450-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
18-IXYF40N450-ND
Single IGBTs 18-IXYF40N450-ND
IGBT

IGBT

Buy Now Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - IGBTs
IXYF40N450
Discrete Semiconductor Products - Transistors - IGBTs IXYF40N450
IGBT 4500V 32A ISOPLUS I4PAK

IGBT 4500V 32A ISOPLUS I4PAK

Supplier's Site

Technical Specifications

  Littelfuse, Inc. DigiKey Acme Chip Technology Co., Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYF40N450 18-IXYF40N450-ND IXYF40N450
Product Name 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
VCES 4500 volts
VCE(on) 3.9 volts
IC(max) 60 amps
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