Littelfuse, Inc. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and... | |
| Developed using the charge compensation principle and proprietary process technology, these devices exhibit low on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances... | |
| Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability... | |
| Industrial grade, single switch SiC mosfet built in a 4 connectors, UL certified SOT227B package providing 3000V isolation (1s). Featuring a kelvin connection pin, and exhibiting good power cycling characteristics,... | |
| Industrial grade, single switch SiC mosfets built in a 4 connectors, UL certified SOT227B package providing 3000V isolation (1s). Featuring a kelvin connection pin, and exhibiting good power cycling characteristics,... | |
| Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift... | |
| Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ | |
| Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction,... | |
| The 600V X3-Class Ultra Junction MOSFET IXFP36N60X3 is available in 36A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. | |
| The 600V X3-Class Ultra Junction MOSFET IXFT60N60X3HV is available in 60A nominal current rating and TO-268HV package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. | |
| The 600V X3-Class Ultra Junction MOSFETs are available in versions featuring 36A-98A nominal current rating. They are available in various TO-247, TO-263, TO-220 and TO-268HV packages.These Power MOSFETs feature significantly... | |
| The 60V TrenchT3™ Power MOSFETs represent an expansion of the low-voltage Trench MOSFET product lines. With on-resistance as low as 3.1 milliohms, these devices are designed for high-power density, switched-mode... | |
| The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. | |
| The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit... | |
| The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They... | |
| The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. | |
| These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these... | |
| This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-220 package. These Power MOSFETs feature significantly reduced channel resistance... | |
| Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating... | |
| Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. | |
| With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFP12N65X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body... | |
| With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFP34N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body... |
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