Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH30N65C3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH30N65C3 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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IXYH30N65C3 is a 650V IGBT designed for 20-60 kHz switching applications, packaged in a TO-247 case with a weight of 6 g. It has a continuous collector current rating of 30 A at 110°C and a peak collector current of 118 A at 25°C for 1 ms. The device features a square RBSOA, avalanche capability, and short-circuit tolerance with a maximum junction temperature of 175°C. Its collector-emitter saturation voltage is 2.70 V at 30 A and 15 V gate-emitter voltage. Thermal resistance from junction to case is 0.21 °C/W. The IGBT is rated for IEC 60286-3, RoHS, and is avalanche rated with international standard packaging.

Datasheet Summary
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IXYH30N65C3 is a 650V IGBT designed for 20-60 kHz switching applications, packaged in a TO-247 case with a weight of 6 g. It has a continuous collector current rating of 30 A at 110°C and a peak collector current of 118 A at 25°C for 1 ms. The device features a square RBSOA, avalanche capability, and short-circuit tolerance with a maximum junction temperature of 175°C. Its collector-emitter saturation voltage is 2.70 V at 30 A and 15 V gate-emitter voltage. Thermal resistance from junction to case is 0.21 °C/W. The IGBT is rated for IEC 60286-3, RoHS, and is avalanche rated with international standard packaging.

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH30N65C3 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH30N65C3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH30N65C3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH30N65C3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
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