The IXYN220N65A5 is a 650 V, 220 A Gen5 XPT™ IGBT in a SOT-227B (miniBLOC) package, designed for switching applications up to 5 kHz. It has a collector-emitter saturation voltage of 1.35 V at 100 A and 15 V gate-emitter voltage, a total gate charge of 750 nC, and a turn-off fall time of 225 ns. The device supports a continuous collector current of 220 A at 110 °C and a pulsed collector current of 1180 A at 1 ms. Thermal resistance from junction to case is 0.125 °C/W, and case-to-heat sink is 0.05 °C/W. It features a square reverse-biased safe operating area and operates with a junction temperature range of -55 to 175 °C. The isolation voltage is 2500 V~ for 1 minute and 3000 V~ for 1 second. Mounting torque is 1.5 Nm (13 lb.in).
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYN220N65A5 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
