Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXXN110N65B4H1

Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat
  • Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXXN110N65B4H1 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Igbt, Module, 650V, 230A, Sot-227B; Continuous Collector Current Littelfuse - 03AH1986 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXXN110N65B4H1 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXXN110N65B4H1
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXXN110N65B4H1
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
650V 110A IGBT Transistor
279-IXXN110N65B4H1
650V 110A IGBT Transistor 279-IXXN110N65B4H1
IGBT 650V 110A Power Transistor Product overview: IXXN110N65B4H1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 110A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 110A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXXN110N65B4H1 can be used for catalog matching and distributor lookup.

IGBT 650V 110A Power Transistor Product overview: IXXN110N65B4H1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 110A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 110A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXXN110N65B4H1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Igbt, Module, 650V, 230A, Sot-227B; Continuous Collector Current Littelfuse - 03AH1986 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Module, 650V, 230A, Sot-227B; Continuous Collector Current Littelfuse
03AH1986
Igbt, Module, 650V, 230A, Sot-227B; Continuous Collector Current Littelfuse 03AH1986
IGBT, MODULE, 650V, 230A, SOT-227B; Continuous Collector Current:230A; Collector Emitter Saturation Voltage:1.72V; Power Dissipation:750W; Operating Temperature Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage Max:650V RoHS Compliant: Yes

IGBT, MODULE, 650V, 230A, SOT-227B; Continuous Collector Current:230A; Collector Emitter Saturation Voltage:1.72V; Power Dissipation:750W; Operating Temperature Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage Max:650V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXN110N65B4H1 279-IXXN110N65B4H1 03AH1986
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs 650V 110A IGBT Transistor Igbt, Module, 650V, 230A, Sot-227B; Continuous Collector Current Littelfuse
VCES 650 volts
VCE(on) 2.1 volts
IC(max) 230 amps
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