The IXYN30N170CV1 is a 1700 V, 30 A IGBT with an integrated fast recovery diode in an SOT-227B miniBLOC package weighing 30 g. It operates from -55 °C to 175 °C junction temperature with a collector-emitter saturation voltage of 4.0 V (typ) at 30 A and 15 V gate drive, rising to 4.6 V at 150 °C. The anti-parallel diode has a forward voltage of 3.5 V at 30 A. Thermal resistance junction-to-case is 0.22 °C/W for the IGBT and 0.43 °C/W for the diode. Isolation voltage is 2500 V~ RMS. The device supports a Kelvin emitter and meets AEC-Q200 and RoHS standards.
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
IGBT, MODULE, 1.7KV, 80A, SOT-227B; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:3.5V; Power Dissipation:680W; Operating Temperature Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.7kV RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYN30N170CV1 | 03AH2089 |
| Product Name | 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs | Igbt, Module, 1.7Kv, 80A, Sot-227B; Continuous Collector Current Littelfuse |
| VCES | 1700 volts | |
| VCE(on) | 4 volts | |
| IC(max) | 80 amps |
