Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYH30N120C4

Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low gate drive requirements Low on-state voltages Vcesat Optimized for high switching frequencies up to 60kHz Positive thermal coefficient of Vcesat International standard packages
  • Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH30N120C4 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low gate drive requirements Low on-state voltages Vcesat Optimized for high switching frequencies up to 60kHz Positive thermal coefficient of Vcesat International standard packages
Datasheet
Datasheet Summary
Powered by GS/AI

The IXYH30N120C4 is a 1200V, 30A continuous Trench IGBT in a TO-247 package, designed for high-frequency switching applications up to 50kHz. It has a typical collector-emitter saturation voltage of 2.4V at 25°C and 15V gate drive, with a maximum junction temperature of 175°C. The device features a positive thermal coefficient of Vce(sat), enabling parallel operation, and low gate charge requirements. Its thermal resistance from junction to case is 0.30°C/W, and it supports a maximum mounting torque of 1.13 Nm. The part is certified to RoHS standards and meets international package requirements.

Datasheet Summary
Powered by GS/AI

The IXYH30N120C4 is a 1200V, 30A continuous Trench IGBT in a TO-247 package, designed for high-frequency switching applications up to 50kHz. It has a typical collector-emitter saturation voltage of 2.4V at 25°C and 15V gate drive, with a maximum junction temperature of 175°C. The device features a positive thermal coefficient of Vce(sat), enabling parallel operation, and low gate charge requirements. Its thermal resistance from junction to case is 0.30°C/W, and it supports a maximum mounting torque of 1.13 Nm. The part is certified to RoHS standards and meets international package requirements.

Suppliers

Company
Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH30N120C4 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH30N120C4
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYH30N120C4
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low gate drive requirements Low on-state voltages Vcesat Optimized for high switching frequencies up to 60kHz Positive thermal coefficient of Vcesat International standard packages

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low gate drive requirements Low on-state voltages Vcesat Optimized for high switching frequencies up to 60kHz Positive thermal coefficient of Vcesat International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH30N120C4
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
Unlock Full Specs
to access all available technical data