Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH120N65B3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYH120N65B3 is a 650V IGBT in a TO-247 package designed for 10-30 kHz switching applications such as power inverters, UPS, motor drives, and PFC circuits. It has a continuous collector current rating of 120 A at 110°C and a peak pulse current of 760 A at 25°C. The device features a typical collector-emitter saturation voltage of 1.90 V at 100 A and 15 V gate drive, and an off-state voltage rating of 650 V. It is rated for a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.11°C/W. The IGBT is avalanche-rated, has square RBSOA capability, and is short-circuit capable. It meets international standard package requirements and is RoHS compliant. The TO-247 package dimensions are defined, with a weight of 6 g and mounting torque of 1.13 Nm (10 lb.in).

Datasheet Summary
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The IXYH120N65B3 is a 650V IGBT in a TO-247 package designed for 10-30 kHz switching applications such as power inverters, UPS, motor drives, and PFC circuits. It has a continuous collector current rating of 120 A at 110°C and a peak pulse current of 760 A at 25°C. The device features a typical collector-emitter saturation voltage of 1.90 V at 100 A and 15 V gate drive, and an off-state voltage rating of 650 V. It is rated for a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.11°C/W. The IGBT is avalanche-rated, has square RBSOA capability, and is short-circuit capable. It meets international standard package requirements and is RoHS compliant. The TO-247 package dimensions are defined, with a weight of 6 g and mounting torque of 1.13 Nm (10 lb.in).

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH120N65B3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH120N65B3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH120N65B3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH120N65B3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
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