Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYP24N100A4

Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
Datasheet
Datasheet Summary
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The IXYP24N100A4 is a 1000V, 24A continuous IGBT in a TO-220 package, designed for high-power switching applications up to 5kHz. It has a maximum collector-emitter voltage of 1000V, a collector current rating of 24A at 110°C, and a saturated collector-emitter voltage of 1.90V typ at 25°C and 24A. Thermal resistance from junction to case is 0.50°C/W in TO-220 package. It features positive thermal coefficient of Vce(sat), low gate drive requirements, and is qualified for industrial applications including motor drives, UPS, and welding machines. Package dimensions and weight are not provided, but the TO-220 mounting torque is specified at 1.13 Nm (10 lb.in).

Datasheet Summary
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The IXYP24N100A4 is a 1000V, 24A continuous IGBT in a TO-220 package, designed for high-power switching applications up to 5kHz. It has a maximum collector-emitter voltage of 1000V, a collector current rating of 24A at 110°C, and a saturated collector-emitter voltage of 1.90V typ at 25°C and 24A. Thermal resistance from junction to case is 0.50°C/W in TO-220 package. It features positive thermal coefficient of Vce(sat), low gate drive requirements, and is qualified for industrial applications including motor drives, UPS, and welding machines. Package dimensions and weight are not provided, but the TO-220 mounting torque is specified at 1.13 Nm (10 lb.in).

Suppliers

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Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYP24N100A4 - Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXYP24N100A4
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYP24N100A4
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYP24N100A4
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1000 volts
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