The IXYH40N120B4H1 is a 1200 V, 40 A Trench IGBT with an integrated sonic diode, packaged in a TO-247-3L case measuring 20.79 to 21.45 mm in diameter and 19.80 to 20.30 mm in length. It features a collector-emitter saturation voltage of 2.10 V at 32 A and 15 V gate drive, a junction-to-case thermal resistance of 0.25 °C/W, and a maximum junction temperature of 175 °C. The device is optimized for 5-30 kHz switching and includes a reverse-biased safe operating area rated for 80 A at 150 °C. It meets RoHS standards and is designed for applications including power inverters, PFC circuits, UPS, motor drives, and welding machines.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. These IGBTs have breakdown voltage from 650V till 1200V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYH40N120B4H1 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
