The IXYP20N65B3 is a 650V IGBT in a TO-220 package, designed for switching applications in the 5-30 kHz range. It has a continuous collector current rating of 20 A at 110°C and a peak pulse current of 108 A at 25°C for 1 ms. The collector-emitter saturation voltage is 2.10 V at 20 A and 15 V gate-emitter voltage, with a typical value of 2.05 V at 150°C junction temperature. The device features a square reverse-bias safe operating area, avalanche capability, and short-circuit tolerance with a maximum withstand time of 5 μs. Thermal resistance from junction to case is 0.50 °C/W. It is rated for operation from -55 °C to 175 °C junction temperature and meets international standard package requirements.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYP20N65B3 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
