IXYH60N65A5 is a 650 V, 60 A Gen5 XPT™ IGBT in a TO-247 package, designed for switching applications up to 5 kHz. It has a collector-emitter saturation voltage of 1.35 V at 36 A and 15 V gate-emitter voltage, with a typical turn-off fall time of 110 ns. The device supports a maximum junction temperature of 175 °C and a thermal resistance from junction to case of 0.38 K/W. It features a square RBSOA and low gate charge of 128 nC, enabling efficient hard-switching operation with reduced gate drive requirements.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYH60N65A5 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
