The IXYK220N65A5 is a 650 V, 220 A Gen5 XPT™ IGBT in a TO-264 package, designed for switching applications up to 5 kHz. It has a collector-emitter saturation voltage of 1.35 V at 100 A and 15 V gate-emitter bias, with a junction-to-case thermal resistance of 0.093 °C/W. The device supports a maximum junction temperature of 175 °C, a transient gate-emitter voltage of ±30 V, and a continuous collector current of 220 A at 110 °C. It features a square reverse-biased safe operating area and a gate charge of 750 nC. The package dimensions are 26.59 mm in length, 20.29 mm in width, and 5.31 mm in height. The part meets RoHS standards.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYK220N65A5 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
