Littelfuse, Inc. Igbt Module, Dual Npn, 1.2Kv, 200A; Continuous Collector Current Littelfuse MG12150S-BN2MM

Description
IGBT MODULE, DUAL NPN, 1.2KV, 200A; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:625W; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
  • Igbt Module, Dual Npn, 1.2Kv, 200A; Continuous Collector Current Littelfuse - 31Y2584 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - MG12150S-BN2MM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Datasheet
Description
IGBT MODULE, DUAL NPN, 1.2KV, 200A; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:625W; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
Datasheet

Suppliers

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Product
Description
Supplier Links
Igbt Module, Dual Npn, 1.2Kv, 200A; Continuous Collector Current Littelfuse - 31Y2584 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, Dual Npn, 1.2Kv, 200A; Continuous Collector Current Littelfuse
31Y2584
Igbt Module, Dual Npn, 1.2Kv, 200A; Continuous Collector Current Littelfuse 31Y2584
IGBT MODULE, DUAL NPN, 1.2KV, 200A; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:625W; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

IGBT MODULE, DUAL NPN, 1.2KV, 200A; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:625W; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Modules
MG12150S-BN2MM
IGBT Modules MG12150S-BN2MM
IGBT Modules 1200V 150A Dual

IGBT Modules 1200V 150A Dual

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - MG12150S-BN2MM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
MG12150S-BN2MM
Discrete Semiconductor Products - Transistors - IGBTs MG12150S-BN2MM
IGBT MODULE 1200V 200A 625W S3

IGBT MODULE 1200V 200A 625W S3

Supplier's Site

Technical Specifications

  Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 31Y2584 MG12150S-BN2MM MG12150S-BN2MM
Product Name Igbt Module, Dual Npn, 1.2Kv, 200A; Continuous Collector Current Littelfuse IGBT Modules Discrete Semiconductor Products - Transistors - IGBTs
PD 625000 milliwatts
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