The IXYH40N90C3D1 is a 900V XPT IGBT with an integrated ultra-fast anti-parallel diode, designed for high-frequency switching applications up to 50 kHz. It is packaged in a TO-247 AD case with a weight of 6 g. The device has a continuous collector current rating of 40 A at 110°C and a pulse collector current capability of 180 A. The collector-emitter saturation voltage is 2.5 V at 40 A and 15 V gate drive, increasing to 2.9 V at 150°C junction temperature. Switching characteristics include a turn-on delay time of 27 ns, rise time of 54 ns, turn-off delay time of 78 ns, and fall time of 110 ns at 125°C. The device has a thermal resistance junction-to-case of 0.21 °C/W and operates from -55°C to +150°C. It meets IEC 60286-3 standards, features a square RBSOA, and is optimized for low switching losses with a positive thermal coefficient of Vce(sat).
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
TRANSISTOR, 900V, 90A, TO-247AD ROHS COMPLIANT: YES
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors |
| Product Number | IXYH40N90C3D1 | 29AK0505 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs | Transistor, 900V, 90A, To-247Ad Rohs Compliant Littelfuse |
| VCES | 900 volts |
