IGBT MODULE 1200V 80A 500W S3
IGBT Modules 1200V 50A Dual
IGBT MODULE, DUAL NPN, 1.2KV, 80A; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:500W; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
| Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | MG1250S-BA1MM | MG1250S-BA1MM | 31Y2592 |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Modules | Igbt Module, Dual Npn, 1.2Kv, 80A; Continuous Collector Current Littelfuse |
| Packing Method | Bulk; Bulk |
