Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXH75N60B3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXXH75N60B3 is a 600V IGBT designed for 5-30 kHz switching applications such as power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-247 AD case with dimensions of 21.46 mm maximum length, 16.26 mm maximum width, and 5.72 mm maximum height. The device has a continuous collector current rating of 75 A at 110°C and a pulsed collector current of 300 A. Its collector-emitter saturation voltage is 1.85 V maximum at 60 A and 15 V gate-emitter voltage. The IGBT supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.20 °C/W. It features a square RBSOA, avalanche capability, and short circuit capability with a clamped inductive load. The part meets IEC 60286-3 and is RoHS compliant.

Datasheet Summary
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The IXXH75N60B3 is a 600V IGBT designed for 5-30 kHz switching applications such as power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-247 AD case with dimensions of 21.46 mm maximum length, 16.26 mm maximum width, and 5.72 mm maximum height. The device has a continuous collector current rating of 75 A at 110°C and a pulsed collector current of 300 A. Its collector-emitter saturation voltage is 1.85 V maximum at 60 A and 15 V gate-emitter voltage. The IGBT supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.20 °C/W. It features a square RBSOA, avalanche capability, and short circuit capability with a clamped inductive load. The part meets IEC 60286-3 and is RoHS compliant.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXH75N60B3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXXH75N60B3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXH75N60B3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXH75N60B3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 600 volts
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