Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXXX200N65B4

Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat
  • Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXXX200N65B4 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Igbt, 650V, 480A, 175Deg C, 1.63Kw; Continuous Collector Current Littelfuse - 03AH2004 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Transistor, Igbt, 650V, 480A, Plus247 Rohs Compliant Littelfuse - 29AK0503 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXXX200N65B4 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXXX200N65B4
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXXX200N65B4
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
650V 200A IGBT Transistor
279-IXXX200N65B4
650V 200A IGBT Transistor 279-IXXX200N65B4
650V 200A IGBT Transistor Product overview: IXXX200N65B4 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 200A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 200A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXXX200N65B4 can be used for catalog matching and distributor lookup.

650V 200A IGBT Transistor Product overview: IXXX200N65B4 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 200A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 200A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXXX200N65B4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Igbt, 650V, 480A, 175Deg C, 1.63Kw; Continuous Collector Current Littelfuse - 03AH2004 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, 650V, 480A, 175Deg C, 1.63Kw; Continuous Collector Current Littelfuse
03AH2004
Igbt, 650V, 480A, 175Deg C, 1.63Kw; Continuous Collector Current Littelfuse 03AH2004
IGBT, 650V, 480A, 175DEG C, 1.63KW; Continuous Collector Current:480A; Collector Emitter Saturation Voltage:1.5V; Power Dissipation:1.63kW; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

IGBT, 650V, 480A, 175DEG C, 1.63KW; Continuous Collector Current:480A; Collector Emitter Saturation Voltage:1.5V; Power Dissipation:1.63kW; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor, Igbt, 650V, 480A, Plus247 Rohs Compliant Littelfuse - 29AK0503 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Igbt, 650V, 480A, Plus247 Rohs Compliant Littelfuse
29AK0503
Transistor, Igbt, 650V, 480A, Plus247 Rohs Compliant Littelfuse 29AK0503
TRANSISTOR, IGBT, 650V, 480A, PLUS247 ROHS COMPLIANT: YES

TRANSISTOR, IGBT, 650V, 480A, PLUS247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXX200N65B4 279-IXXX200N65B4 03AH2004 29AK0503
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs 650V 200A IGBT Transistor Igbt, 650V, 480A, 175Deg C, 1.63Kw; Continuous Collector Current Littelfuse Transistor, Igbt, 650V, 480A, Plus247 Rohs Compliant Littelfuse
VCES 650 volts
VCE(on) 1.7 volts
IC(max) 480 amps
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