Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYA8N90C3D1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYA8N90C3D1 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYA8N90C3D1 is a 900V XPT IGBT with an integrated anti-parallel ultra-fast diode, designed for high-frequency switching applications up to 50 kHz. It is housed in a TO-263 AA package, weighing 2.5 g, and features a maximum continuous collector current of 8 A at 110°C and a collector-emitter saturation voltage of 3.0 V at 8 A and 15 V gate drive. The device has a square RBSOA, avalanche capability, and a positive thermal coefficient of Vce(sat). It meets international standard packaging requirements and operates with a junction temperature range of -55°C to 175°C. The thermal resistance from junction to case is 1.2 °C/W.

Datasheet Summary
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The IXYA8N90C3D1 is a 900V XPT IGBT with an integrated anti-parallel ultra-fast diode, designed for high-frequency switching applications up to 50 kHz. It is housed in a TO-263 AA package, weighing 2.5 g, and features a maximum continuous collector current of 8 A at 110°C and a collector-emitter saturation voltage of 3.0 V at 8 A and 15 V gate drive. The device has a square RBSOA, avalanche capability, and a positive thermal coefficient of Vce(sat). It meets international standard packaging requirements and operates with a junction temperature range of -55°C to 175°C. The thermal resistance from junction to case is 1.2 °C/W.

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYA8N90C3D1 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYA8N90C3D1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYA8N90C3D1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYA8N90C3D1
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 900 volts
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