Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65B3D1 IXYN120N65B3D1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYN120N65B3D1 is a 650V IGBT with a 120A collector current rating at 110°C, packaged in an SOT-227B miniBLOC case, designed for 10-30kHz switching applications. It features a clamped inductive load RBSOA, avalanche capability, and short circuit endurance. The device includes an anti-parallel fast recovery diode with a 100A forward current rating and a reverse recovery time of 156ns at 150°C. Thermal resistance is 0.18°C/W from junction to case and 0.05°C/W from case to heatsink. It is rated for a junction temperature range of -55°C to 175°C, supports 2500V isolation voltage, and meets safety standards for high power density applications. Mounting torque is specified at 1.5 Nm.

Datasheet Summary
Powered by GS/AI

The IXYN120N65B3D1 is a 650V IGBT with a 120A collector current rating at 110°C, packaged in an SOT-227B miniBLOC case, designed for 10-30kHz switching applications. It features a clamped inductive load RBSOA, avalanche capability, and short circuit endurance. The device includes an anti-parallel fast recovery diode with a 100A forward current rating and a reverse recovery time of 156ns at 150°C. Thermal resistance is 0.18°C/W from junction to case and 0.05°C/W from case to heatsink. It is rated for a junction temperature range of -55°C to 175°C, supports 2500V isolation voltage, and meets safety standards for high power density applications. Mounting torque is specified at 1.5 Nm.

Suppliers

Company
Product
Description
Supplier Links
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65B3D1 - IXYN120N65B3D1 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65B3D1
IXYN120N65B3D1
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65B3D1 IXYN120N65B3D1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYN120N65B3D1
Product Name Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65B3D1
VCES 650 volts
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