The IXXX100N60B3H1 is a 600V, 100A IGBT with an ultra-fast anti-parallel diode, optimized for 10-30kHz switching in inverters, UPS, and motor drives. Packaged in a PLUS247 case, it has a maximum junction temperature of 150°C and weighs 6 g. The collector-emitter saturation voltage is 1.50 V at 70 A and 15 V gate drive, rising to 1.77 V at 150°C. It supports a clamped inductive switching time of up to 200 ns and an avalanche energy rating of 600 mJ. Thermal resistance junction-to-case is 0.30 °C/W for the diode and 0.15 °C/W for the IGBT. Continuous collector current is 100 A at 100°C and 65 A at 110°C, with peak pulse current of 440 A at 1 ms. The diode has a reverse recovery time of 140 ns at 200 A/μs. The device features square RBSOA and short-circuit capability.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXX100N60B3H1 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 600 volts |
