The IXYH50N65C3D1 is a 650V, 50A IGBT with an anti-parallel fast diode, designed for switching applications between 20 and 60 kHz. It is packaged in a TO-247 case and weighs 6 grams. The device features a low gate drive requirement, square reverse bias safe operating area, avalanche capability, and short circuit tolerance. It has a maximum collector current of 50 A at 110°C, a collector-emitter saturation voltage of 2.10 V at 36 A and 15 V gate drive, and a thermal resistance junction-to-case of 0.21 °C/W. The IGBT meets international standard package requirements and is rated for junction temperatures from -55°C to 175°C.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYH50N65C3D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYH50N65C3D1 |
| VCES | 650 volts |
