Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH50N65C3H1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYH50N65C3H1 is a 650V IGBT designed for 20-60kHz switching applications in power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-247AD case, weighing 6 grams. The device continuously handles 50A at 110°C junction temperature and 40A at 175°C junction temperature with a collector-emitter saturation voltage of 1.74V to 2.10V at 36A and 15V gate drive. It features a square RBSOA, avalanche capability, and short-circuit robustness with an I_CSM rating of 250A for 1ms. The reverse diode has a forward voltage of 2.10V at 150°C and a reverse recovery time of 120ns. Thermal resistance from junction to case is 0.25°C/W. The operating junction temperature range is -55°C to 175°C. The part is mounted with a torque of 1.13 Nm and soldered to a maximum lead temperature of 260°C for 10 seconds.

Datasheet Summary
Powered by GS/AI

The IXYH50N65C3H1 is a 650V IGBT designed for 20-60kHz switching applications in power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-247AD case, weighing 6 grams. The device continuously handles 50A at 110°C junction temperature and 40A at 175°C junction temperature with a collector-emitter saturation voltage of 1.74V to 2.10V at 36A and 15V gate drive. It features a square RBSOA, avalanche capability, and short-circuit robustness with an I_CSM rating of 250A for 1ms. The reverse diode has a forward voltage of 2.10V at 150°C and a reverse recovery time of 120ns. Thermal resistance from junction to case is 0.25°C/W. The operating junction temperature range is -55°C to 175°C. The part is mounted with a torque of 1.13 Nm and soldered to a maximum lead temperature of 260°C for 10 seconds.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH50N65C3H1 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH50N65C3H1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH50N65C3H1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH50N65C3H1
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
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