The IXXK160N65B4 is a 650V IGBT in a TO-264 package, designed for 10-30kHz switching applications. It has a continuous collector current rating of 160A at 110°C and a peak pulse collector current of 860A at 25°C for 1ms. The collector-emitter saturation voltage is 1.54V to 1.80V at 160A and 15V gate drive. It features a square RBSOA with a clamp voltage of 360V and a short-circuit endurance of 10µs at 150°C. Thermal resistance from junction to case is 0.16°C/W. The device is rated for junction temperatures from -55°C to 175°C and has a maximum lead temperature of 300°C for 10 seconds. Its internal structure enables low gate drive requirements and high power density.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXK160N65B4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
