Littelfuse, Inc. 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IXYT25N250CHV

Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
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Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
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Datasheet
Datasheet Summary
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The IXYT25N250CHV is a 2500V XPT™ IGBT designed for high-voltage switching applications such as switch-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, and capacitor discharge circuits. It is packaged in a TO-268HV surface-mount case measuring 4 grams and features a continuous collector current of 25A at 110°C, a peak collector current of 235A for 1ms, and a maximum power dissipation of 937W at 25°C. The device has a low saturation voltage of 3.4V to 4.0V at 25°C and a thermal resistance from junction to case of 0.16°C/W. It conforms to AEC-Q200 standards and is rated for operating junction temperatures from -55°C to 175°C. The IGBT exhibits low gate drive requirements, high power density, and a positive temperature coefficient of VCE(sat), enabling paralleling for higher current applications.

Datasheet Summary
Powered by GS/AI

The IXYT25N250CHV is a 2500V XPT™ IGBT designed for high-voltage switching applications such as switch-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, and capacitor discharge circuits. It is packaged in a TO-268HV surface-mount case measuring 4 grams and features a continuous collector current of 25A at 110°C, a peak collector current of 235A for 1ms, and a maximum power dissipation of 937W at 25°C. The device has a low saturation voltage of 3.4V to 4.0V at 25°C and a thermal resistance from junction to case of 0.16°C/W. It conforms to AEC-Q200 standards and is rated for operating junction temperatures from -55°C to 175°C. The IGBT exhibits low gate drive requirements, high power density, and a positive temperature coefficient of VCE(sat), enabling paralleling for higher current applications.

Suppliers

Company
Product
Description
Supplier Links
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs - IXYT25N250CHV - Littelfuse, Inc.
Rosemont, IL, United States
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs
IXYT25N250CHV
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IXYT25N250CHV
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages

Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages

Supplier's Site Datasheet
IGBTs - 1464359 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1464359
IGBTs 1464359
XPT IGBT 25A 2500V TO268HV

XPT IGBT 25A 2500V TO268HV

Supplier's Site
IGBTs - 1464256 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1464256
IGBTs 1464256
XPT IGBT 25A 2500V TO268HV

XPT IGBT 25A 2500V TO268HV

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYT25N250CHV 1464359
Product Name 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IGBTs
VCES 2500 volts
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