The IXYK100N65B3D1 is a 650V, 100A IGBT with an integrated ultra-fast anti-parallel diode, designed for switching applications from 10 to 30 kHz. It is packaged in a TO-264 housing and rated for a maximum junction temperature of 175°C. The device has a collector-emitter saturation voltage of 1.85V maximum at 70A and 15V gate-emitter voltage, and a thermal resistance from junction to case of 0.18°C/W. It features square reverse bias safe operating area (RBSOA), avalanche capability, and short-circuit withstand time of 8μs at 150°C. The IGBT is optimized for high power density and low gate drive requirements.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYK100N65B3D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYK100N65B3D1 |
| VCES | 650 volts |
