- Trained on our vast library of engineering resources.

Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXX300N60B3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Features: Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package Advantages: Hard-switching capability High power density Low gate drive requirements Applications: Battery chargers E-Bikes Lamp ballasts Power inverters Power Factor Correction (PFC) circuits Switched-mode power supplies Uninterruptible Power Supplies (UPS) Welding machines
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXX300N60B3 - Littelfuse, Inc.
Chicago, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXXX300N60B3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXX300N60B3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Features: Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package Advantages: Hard-switching capability High power density Low gate drive requirements Applications: Battery chargers E-Bikes Lamp ballasts Power inverters Power Factor Correction (PFC) circuits Switched-mode power supplies Uninterruptible Power Supplies (UPS) Welding machines

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Features: Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package Advantages: Hard-switching capability High power density Low gate drive requirements Applications: Battery chargers E-Bikes Lamp ballasts Power inverters Power Factor Correction (PFC) circuits Switched-mode power supplies Uninterruptible Power Supplies (UPS) Welding machines

Supplier's Site Datasheet
Transistor, Igbt, 600V, 550A, Plus247; Continuous Collector Current Littelfuse - 03AH2005 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Igbt, 600V, 550A, Plus247; Continuous Collector Current Littelfuse
03AH2005
Transistor, Igbt, 600V, 550A, Plus247; Continuous Collector Current Littelfuse 03AH2005
TRANSISTOR, IGBT, 600V, 550A, PLUS247; Continuous Collector Current:550A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:2.3kW; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

TRANSISTOR, IGBT, 600V, 550A, PLUS247; Continuous Collector Current:550A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:2.3kW; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXX300N60B3 03AH2005
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs Transistor, Igbt, 600V, 550A, Plus247; Continuous Collector Current Littelfuse
VCES 600 volts
VCE(on) 1.6 volts
IC(max) 550 amps
tf 95 ns
Unlock Full Specs
to access all available technical data

Similar Products

1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs - IXBT24N170 - Littelfuse, Inc.
Specs
VCES 1700 volts
VCE(on) 2.5 volts
IC(max) 60 amps
View Details
2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs - IXBH14N300HV - Littelfuse, Inc.
Specs
VCES 3000 volts
VCE(on) 2.7 volts
IC(max) 38 amps
View Details
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFH230N075T2 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 75 volts
IDSS 230000 milliamps
View Details
2 suppliers
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH74N20P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 200 volts
IDSS 74000 milliamps
View Details
3 suppliers