Littelfuse, Inc. 1200V 90A 370W IGBT Transistor MII75-12A3

Description
Trans IGBT Module N-CH 1200V 90A 370W 7-Pin Y4-M5 Product overview: MII75-12A3 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 90A, 370W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 90A, 370W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-MII75-12A3 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
Trans IGBT Module N-CH 1200V 90A 370W 7-Pin Y4-M5 Product overview: MII75-12A3 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 90A, 370W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 90A, 370W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-MII75-12A3 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
1200V 90A 370W IGBT Transistor
297-MII75-12A3
1200V 90A 370W IGBT Transistor 297-MII75-12A3
Trans IGBT Module N-CH 1200V 90A 370W 7-Pin Y4-M5 Product overview: MII75-12A3 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 90A, 370W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 90A, 370W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-MII75-12A3 can be used for catalog matching and distributor lookup.

Trans IGBT Module N-CH 1200V 90A 370W 7-Pin Y4-M5 Product overview: MII75-12A3 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 90A, 370W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 90A, 370W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-MII75-12A3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Igbt, Module, N-Ch, 1.2Kv, 90A; Dc Collector Current Ixys Semiconductor - 34AC1919 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Module, N-Ch, 1.2Kv, 90A; Dc Collector Current Ixys Semiconductor
34AC1919
Igbt, Module, N-Ch, 1.2Kv, 90A; Dc Collector Current Ixys Semiconductor 34AC1919
IGBT, MODULE, N-CH, 1.2KV, 90A; DC Collector Current:90A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:370W; Junction Temperature, Tj Max:125°C; IGBT Termination:Stud; Product Range:-; No. of Pins:11Pins RoHS Compliant: Yes

IGBT, MODULE, N-CH, 1.2KV, 90A; DC Collector Current:90A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:370W; Junction Temperature, Tj Max:125°C; IGBT Termination:Stud; Product Range:-; No. of Pins:11Pins RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 297-MII75-12A3 34AC1919
Product Name 1200V 90A 370W IGBT Transistor Igbt, Module, N-Ch, 1.2Kv, 90A; Dc Collector Current Ixys Semiconductor
PD 370 milliwatts 370000 milliwatts
Unlock Full Specs
to access all available technical data