The IXYF30N450 is a 4500 V, 17 A IGBT designed for high-voltage switching applications such as switch-mode power supplies, UPS, and capacitor discharge circuits. It is packaged in the ISOPLUS i4-PakTM with an isolated tab, weighing 5 g. The device features a silicon chip on direct-copper bond substrate, provides 4000 V~ electrical isolation, and has a maximum junction temperature of 150 °C. Its lower saturation voltage VCE(sat) is specified at 3.9 V at 30 A and 15 V gate drive, rising to 4.5 V at 125 °C. Thermal resistance from junction to case is 0.54 °C/W, and case to heat sink is 0.15 °C/W. It meets UL 94 V-0 flammability rating and is designed for operation from -55 °C to 150 °C. Pulse testing limits are constrained to t < 300 µs and d < 2%. Reverse-bias safe operating area is rated up to 3600 V under clamped inductive load.
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
IGBT 4500V 23A ISOPLUS I4-PAC
TRANSISTOR, IGBT, 4.5KV, 23A, ISOPLUS-I4; Continuous Collector Current:23A; Collector Emitter Saturation Voltage:3.2V; Power Dissipation:230W; Collector Emitter Voltage Max:4.5kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
| Littelfuse, Inc. | DigiKey | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYF30N450 | 1294-IXYF30N450-CHP | 03AH2019 |
| Product Name | 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs | Single IGBTs | Transistor, Igbt, 4.5Kv, 23A, Isoplus-I4; Continuous Collector Current Littelfuse |
| VCES | 4500 volts | ||
| VCE(on) | 3.9 volts | ||
| IC(max) | 23 amps | ||
| Package Type | I4-PAK | ISOPLUSi5-PAK™ | TO-3 |
