Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYN110N120A4

Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
  • Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYN110N120A4 - Littelfuse, Inc.
    Littelfuse, Inc.
Request a Quote
Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXYN110N120A4 is a 1200V XPTTM IGBT in a SOT-227B miniBLOC package, designed for high-power switching applications up to 5 kHz. It has a continuous collector current rating of 110 A at 110°C and a peak collector current of 950 A for 1 ms. The device features a low collector-emitter saturation voltage of 1.45 V typ at 25°C and a positive temperature coefficient of Vce(sat). Thermal resistance is 0.18 °C/W from junction to case and 0.05 °C/W from case to sink. It supports mounting torque of 1.5 Nm and has a 2500 V~ isolation voltage. The device meets RoHS standards and is qualified for operation from -55°C to 175°C. It is optimized for low conduction losses and high power density applications such as power inverters, motor drives, and PFC circuits.

Datasheet Summary
Powered by GS/AI

The IXYN110N120A4 is a 1200V XPTTM IGBT in a SOT-227B miniBLOC package, designed for high-power switching applications up to 5 kHz. It has a continuous collector current rating of 110 A at 110°C and a peak collector current of 950 A for 1 ms. The device features a low collector-emitter saturation voltage of 1.45 V typ at 25°C and a positive temperature coefficient of Vce(sat). Thermal resistance is 0.18 °C/W from junction to case and 0.05 °C/W from case to sink. It supports mounting torque of 1.5 Nm and has a 2500 V~ isolation voltage. The device meets RoHS standards and is qualified for operation from -55°C to 175°C. It is optimized for low conduction losses and high power density applications such as power inverters, motor drives, and PFC circuits.

Suppliers

Company
Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYN110N120A4 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXYN110N120A4
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYN110N120A4
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Low-Power IGBT Transistor
279-IXYN110N120A4
Low-Power IGBT Transistor 279-IXYN110N120A4
Ultra Low-Vsat IGBT Product overview: IXYN110N120A4 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Low-Power. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYN110N120A4 can be used for catalog matching and distributor lookup.

Ultra Low-Vsat IGBT Product overview: IXYN110N120A4 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Low-Power. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYN110N120A4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYN110N120A4 279-IXYN110N120A4
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs Low-Power IGBT Transistor
VCES 1200 volts
Unlock Full Specs
to access all available technical data