The IXYP10N65B3D1 is a 650V IGBT with a 10A continuous collector current, designed for 5-30kHz switching applications in power inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, welding machines, and lamp ballasts. It is packaged in a TO-220 case with a weight of 2.5 g and has an anti-parallel fast diode. The device features a square RBSOA, avalanche capability, short circuit tolerance, and low gate drive requirements. Thermal resistance from junction to case is 0.94 °C/W for the IGBT and 2.30 °C/W for the diode. It meets international standard package requirements and is rated for operation from -55°C to 175°C junction temperature. The IGBT is optimized for high power density and rugged performance in hard-switching environments.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYP10N65B3D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYP10N65B3D1 |
| VCES | 650 volts |
