The IXXQ30N60B3M is a 600V insulated-gate bipolar transistor optimized for 5-30 kHz switching in applications such as power inverters, motor drives, and SMPS. It is housed in an overmolded package with an electrically isolated tab and weighs 5 g. The device has a continuous collector current rating of 19 A at 110°C and a pulsed collector current of 140 A. Its collector-emitter saturation voltage is 1.85 V at 24 A and 15 V gate drive. The device supports a maximum junction temperature of 175°C and offers a thermal resistance from junction to case of 1.66 °C/W. It has square reverse bias safe operating area (RBSOA), avalanche capability, and short-circuit immunity, with 2500 V~ electrical isolation. The gate-emitter threshold voltage ranges from 3.0 to 5.5 V, and the device is rated for a maximum gate-emitter voltage of ±20 V continuous and ±30 V transient.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXQ30N60B3M |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 600 volts |
