The IXYH40N65C3H1 is a 650 V XPT™ IGBT with an integrated anti-parallel sonic diode, designed for switching applications between 20 and 60 kHz. It is packaged in a TO-247-3L case with dimensions of 20.79-21.45 mm in length and 15.48-16.24 mm in width. The device has a continuous collector current rating of 40 A at 110 °C and a collector-emitter saturation voltage of 2.00-2.35 V at 40 A and 15 V gate drive. It supports short-circuit operation for 5 µs and is rated for non-repetitive avalanche energy up to 300 mJ. Thermal resistance from junction to case is 0.50 °C/W for the IGBT and 0.60 °C/W for the diode. The device features a square RBSOA and is avalanche-rated.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYH40N65C3H1 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
