Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXXH140N65C4

Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat
  • Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXXH140N65C4 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat
Datasheet
Datasheet Summary
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The IXXH140N65C4 is a 650V XPT trench IGBT in a TO-247 package, designed for 5-20 kHz switching applications such as power inverters, motor drives, and PFC circuits. It has a continuous collector current rating of 140 A at 110°C and a pulsed collector current capability of 730 A. The device features a clamped inductive switching short-circuit duration of 10 μs, square RBSOA, and a maximum junction temperature of 175°C. Its collector-to-emitter saturation voltage is 2.30 V at 140 A and 15 V gate-emitter voltage. Thermal resistance from junction to case is 0.125 °C/W, and the package weighs 6 g. It complies with RoHS standards.

Datasheet Summary
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The IXXH140N65C4 is a 650V XPT trench IGBT in a TO-247 package, designed for 5-20 kHz switching applications such as power inverters, motor drives, and PFC circuits. It has a continuous collector current rating of 140 A at 110°C and a pulsed collector current capability of 730 A. The device features a clamped inductive switching short-circuit duration of 10 μs, square RBSOA, and a maximum junction temperature of 175°C. Its collector-to-emitter saturation voltage is 2.30 V at 140 A and 15 V gate-emitter voltage. Thermal resistance from junction to case is 0.125 °C/W, and the package weighs 6 g. It complies with RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXXH140N65C4 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXXH140N65C4
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXXH140N65C4
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXH140N65C4
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
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