Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXN200N60B3H1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXXN200N60B3H1 is a 600V IGBT with a 98A collector current rating at 110°C, designed for 10-30kHz switching applications in power inverters, motor drives, and PFC circuits. It is packaged in a SOT-227B miniBLOC case, weighing 30g, with an isolated mounting surface and an integrated ultra-fast anti-parallel diode. The device has a maximum collector-emitter voltage of 600V, a collector-emitter saturation voltage of 1.7V at 100A and 15V gate drive, and a short-circuit withstand time of 10μs. Thermal resistance is 0.16°C/W from junction to case and 0.05°C/W from case to heatsink. It is rugged, avalanche-rated, and supports square RBSOA. The part meets RoHS standards, has 2500V AC electrical isolation, and is qualified for operation from -55°C to 150°C junction temperature.

Datasheet Summary
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The IXXN200N60B3H1 is a 600V IGBT with a 98A collector current rating at 110°C, designed for 10-30kHz switching applications in power inverters, motor drives, and PFC circuits. It is packaged in a SOT-227B miniBLOC case, weighing 30g, with an isolated mounting surface and an integrated ultra-fast anti-parallel diode. The device has a maximum collector-emitter voltage of 600V, a collector-emitter saturation voltage of 1.7V at 100A and 15V gate drive, and a short-circuit withstand time of 10μs. Thermal resistance is 0.16°C/W from junction to case and 0.05°C/W from case to heatsink. It is rugged, avalanche-rated, and supports square RBSOA. The part meets RoHS standards, has 2500V AC electrical isolation, and is qualified for operation from -55°C to 150°C junction temperature.

Suppliers

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Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXN200N60B3H1 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXXN200N60B3H1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXN200N60B3H1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXN200N60B3H1
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 600 volts
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