Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYY8N90C3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
Powered by GS/AI

The IXYY8N90C3 is a 900V XPT IGBT in a TO-252 package, designed for high-frequency switching applications between 20 and 50 kHz. It has a continuous collector current rating of 8A at 110°C and a peak pulse current of 48A at 25°C. The device features a maximum collector-emitter voltage of 900V, a saturation voltage of 2.15V at 8A and 15V gate-emitter bias, and a gate charge of 13.3nC. It exhibits a positive thermal coefficient of Vce(sat), square RBSOA, and is avalanche-rated. Thermal resistance is 0.35°C/W from junction to case. The part is packaged in an international standard TO-252 format with a case weight of 0.35g and operates from -55°C to 175°C. It meets RoHS compliance and is suitable for use in power inverters, UPS, motor drives, SMPS, PFC circuits, and welding machines.

Datasheet Summary
Powered by GS/AI

The IXYY8N90C3 is a 900V XPT IGBT in a TO-252 package, designed for high-frequency switching applications between 20 and 50 kHz. It has a continuous collector current rating of 8A at 110°C and a peak pulse current of 48A at 25°C. The device features a maximum collector-emitter voltage of 900V, a saturation voltage of 2.15V at 8A and 15V gate-emitter bias, and a gate charge of 13.3nC. It exhibits a positive thermal coefficient of Vce(sat), square RBSOA, and is avalanche-rated. Thermal resistance is 0.35°C/W from junction to case. The part is packaged in an international standard TO-252 format with a case weight of 0.35g and operates from -55°C to 175°C. It meets RoHS compliance and is suitable for use in power inverters, UPS, motor drives, SMPS, PFC circuits, and welding machines.

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYY8N90C3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYY8N90C3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYY8N90C3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYY8N90C3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 900 volts
Unlock Full Specs
to access all available technical data