Littelfuse, Inc. Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration X2PT IGBT - MIXG240RF1200PTED MIXG240RF1200PTED

Description
The boost configuration offers a compact and powerfull solution with 2nd generation X2PT igbts for either boost or brake chopper applications.
Description
The boost configuration offers a compact and powerfull solution with 2nd generation X2PT igbts for either boost or brake chopper applications.
Datasheet
Datasheet Summary
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The MIXG240RF1200PTED is a 1200 V, 335 A XPT IGBT module with integrated free-wheeling diode and NTC thermistor, designed for boost/brake chopper applications in motor drives, solar inverters, and uninterruptible power supplies. It features an E2-Pack package with press-fit pins for PCB mounting, a copper base plate, and a height of 17 mm. The IGBT is rated for 10 µs short-circuit endurance and has a collector-emitter saturation voltage of 1.72 V at 200 A and 25°C. The free-wheeling diode exhibits a forward voltage of 2.20 V at 20 A and 25°C with a reverse recovery charge of 71 µC. The module is RoHS compliant, has an isolation voltage of 3600 V~ rms, and operates from -40°C to 150°C. Thermal resistances are 0.12 K/W for junction-to-case (IGBT) and 0.2 K/W for junction-to-case (diode).

Datasheet Summary
Powered by GS/AI

The MIXG240RF1200PTED is a 1200 V, 335 A XPT IGBT module with integrated free-wheeling diode and NTC thermistor, designed for boost/brake chopper applications in motor drives, solar inverters, and uninterruptible power supplies. It features an E2-Pack package with press-fit pins for PCB mounting, a copper base plate, and a height of 17 mm. The IGBT is rated for 10 µs short-circuit endurance and has a collector-emitter saturation voltage of 1.72 V at 200 A and 25°C. The free-wheeling diode exhibits a forward voltage of 2.20 V at 20 A and 25°C with a reverse recovery charge of 71 µC. The module is RoHS compliant, has an isolation voltage of 3600 V~ rms, and operates from -40°C to 150°C. Thermal resistances are 0.12 K/W for junction-to-case (IGBT) and 0.2 K/W for junction-to-case (diode).

Suppliers

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Supplier Links
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration X2PT IGBT - MIXG240RF1200PTED - MIXG240RF1200PTED - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration X2PT IGBT - MIXG240RF1200PTED
MIXG240RF1200PTED
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration X2PT IGBT - MIXG240RF1200PTED MIXG240RF1200PTED
The boost configuration offers a compact and powerfull solution with 2nd generation X2PT igbts for either boost or brake chopper applications.

The boost configuration offers a compact and powerfull solution with 2nd generation X2PT igbts for either boost or brake chopper applications.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number MIXG240RF1200PTED
Product Name Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration X2PT IGBT - MIXG240RF1200PTED
VCES 1200 volts
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