The IXYP30N120C3 is a 1200 V, 30 A insulated gate bipolar transistor (IGBT) in a TO-220 package, designed for high-frequency switching applications up to 50 kHz. It features a collector-emitter saturation voltage of 3.3 V at 30 A and 15 V gate-emitter voltage, with a maximum junction temperature of 175 °C and thermal resistance from junction to case of 0.30 °C/W. The device supports a reverse bias safe operating area (RBSOA) up to 1200 V and is avalanche rated, with a square RBSOA profile. It complies with international standard packaging and is optimized for low switching losses, low gate drive requirements, and high power density. The TO-220 package weighs 3 g and has dimensions of 20.80-21.46 mm in length, 15.75-16.26 mm in width, and 4.70-5.30 mm in height. The device meets AEC-Q200 qualification and is RoHS compliant.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYP30N120C3 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
