The IXYN75N65C3D1 is a 650V IGBT with a 75A continuous collector current rating at 110°C, designed for 20-60kHz switching applications. It is packaged in an SOT-227B miniBLOC case with aluminium nitride isolation and weighs 30 g. The device features a maximum collector-emitter voltage of 650 V, a typical saturation voltage of 2.3 V at 60 A and 15 V gate drive, and a short-circuit withstand time of 8 µs. It includes an anti-parallel fast diode with a forward voltage of 2.5 V at 50 A and a reverse recovery time of 135 ns at 150°C. The IGBT is avalanche rated, has a square RBSOA, and supports a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.25 °C/W. It meets a 2500 V~ isolation voltage rating.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYN75N65C3D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN75N65C3D1 |
| VCES | 650 volts |
