The IXYA50N65C5 is a 650 V, 50 A continuous collector current trench IGBT designed for 20-60 kHz switching applications, packaged in a TO-263AB case with a weight of 2.5 g. It features a collector-emitter saturation voltage of 1.67 V at 36 A and 15 V gate drive, a junction temperature range of -55 to 175 °C, and thermal resistance from junction to case of 0.38 °C/W. The device has a square reverse-biased safe operating area, low gate drive requirements, high surge current capability of 240 A for 1 ms, and meets international standard packaging requirements.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYA50N65C5 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
