Littelfuse, Inc. Ignition IGBT, N-Channel, 18 A, 400 V LGB8204ATH

Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated Gate-Emitter Resistor (RGE) Emitter Ballasting for Short-Circuit Capabiltiy
  • Ignition IGBT, N-Channel, 18 A, 400 V - LGB8204ATH - Littelfuse, Inc.
    Littelfuse, Inc.
Datasheet
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated Gate-Emitter Resistor (RGE) Emitter Ballasting for Short-Circuit Capabiltiy
Datasheet

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Ignition IGBT, N-Channel, 18 A, 400 V - LGB8204ATH - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Ignition IGBT, N-Channel, 18 A, 400 V
LGB8204ATH
Ignition IGBT, N-Channel, 18 A, 400 V LGB8204ATH
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated Gate-Emitter Resistor (RGE) Emitter Ballasting for Short-Circuit Capabiltiy

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated Gate-Emitter Resistor (RGE) Emitter Ballasting for Short-Circuit Capabiltiy

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Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number LGB8204ATH
Product Name Ignition IGBT, N-Channel, 18 A, 400 V
VCE(on) 1.8 volts
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