The LGB8204ATH is a 400 V, 18 A N-channel ignition IGBT in a D2PAK package, designed for high-voltage and high-current switching in ignition and direct fuel injection systems. It features integrated ESD diode protection, an internal gate-emitter resistor, and emitter ballasting for short-circuit capability. The device has a collector-emitter voltage rating of 430 V DC, a continuous collector current of 18 A, and a pulsed current capability of 50 A. It operates over a junction temperature range of -55 °C to +175 °C, with a thermal resistance junction-to-case of 1.3 °C/W and junction-to-ambient of 50 °C/W when mounted on an FR4 board. The IGBT is AEC-Q101 qualified and includes unclamped inductive switching energy ratings of 400 mJ at 25 °C and 300 mJ at 125 °C. The gate threshold voltage ranges from 0.75 V to 2.14 V across temperature.
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated Gate-Emitter Resistor (RGE) Emitter Ballasting for Short-Circuit Capabiltiy
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | LGB8204ATH |
| Product Name | Ignition IGBT, N-Channel, 18 A, 400 V |
| VCE(on) | 1.8 volts |
