The IXYX100N120B3 is a 1200V XPT IGBT in a PLUS247 package, designed for switching applications between 5 and 30 kHz. It has a continuous collector current rating of 100 A at 110°C and a peak collector current of 530 A at 25°C for 1 ms. The collector-emitter saturation voltage is 2.60 V at 100 A and 15 V gate-emitter voltage, increasing to 2.76 V at 150°C junction temperature. The device features a square RBSOA, avalanche capability, and a positive thermal coefficient of Vce(sat). Thermal resistance from junction to case is 0.15 °C/W. It is qualified for operation from -55°C to 175°C and meets international standard package requirements.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
IGBT N-Ch 1200V 100A XPT GenX3 PLUS247
IGBT N-Ch 1200V 100A XPT GenX3 PLUS247
IGBT N-Ch 1200V 100A XPT GenX3 PLUS247
| Littelfuse, Inc. | RS Components, Ltd. | RS Components, Ltd. | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYX100N120B3 | 8080221P | 8080221 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs | IGBTs | IGBTs |
| VCES | 1200 volts |
