Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH40N120B3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYH40N120B3 is a 1200V XPTTM IGBT optimized for 5-30 kHz switching in power inverters, UPS, and motor drives. It is packaged in a TO-247 AD case, measuring 21.46 mm in length and 6.15 mm in body width, and weighs 6 g. It has a continuous collector current rating of 40 A at 110°C and a peak pulse current of 200 A for 1 ms. Collector-emitter saturation voltage is 2.4 to 2.9 V at 40 A and 15 V gate drive, with a positive temperature coefficient. The maximum junction temperature is 175°C, with an avalanche energy rating of 400 mJ and junction-to-case thermal resistance of 0.26 °C/W. The device features square RBSOA, is avalanche rated, and conforms to international standard packaging.

Datasheet Summary
Powered by GS/AI

The IXYH40N120B3 is a 1200V XPTTM IGBT optimized for 5-30 kHz switching in power inverters, UPS, and motor drives. It is packaged in a TO-247 AD case, measuring 21.46 mm in length and 6.15 mm in body width, and weighs 6 g. It has a continuous collector current rating of 40 A at 110°C and a peak pulse current of 200 A for 1 ms. Collector-emitter saturation voltage is 2.4 to 2.9 V at 40 A and 15 V gate drive, with a positive temperature coefficient. The maximum junction temperature is 175°C, with an avalanche energy rating of 400 mJ and junction-to-case thermal resistance of 0.26 °C/W. The device features square RBSOA, is avalanche rated, and conforms to international standard packaging.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH40N120B3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH40N120B3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH40N120B3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH40N120B3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
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