Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYP30N120A4

Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
Datasheet
Datasheet Summary
Powered by GS/AI

The IXYP30N120A4 is a 1200V, 30A continuous current IGBT in a TO-220 package, designed for high-power switching applications up to 5kHz. It features a maximum collector-emitter saturation voltage of 1.9V at 25°C and 150°C, a positive temperature coefficient of Vce(sat), and a thermal resistance from junction to case of 0.50°C/W. The device supports a peak collector current of 184A for 1ms and a clamp energy of 3.4mJ at 15V gate drive. It meets international standard packaging requirements and is qualified for use in power inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protection circuits.

Datasheet Summary
Powered by GS/AI

The IXYP30N120A4 is a 1200V, 30A continuous current IGBT in a TO-220 package, designed for high-power switching applications up to 5kHz. It features a maximum collector-emitter saturation voltage of 1.9V at 25°C and 150°C, a positive temperature coefficient of Vce(sat), and a thermal resistance from junction to case of 0.50°C/W. The device supports a peak collector current of 184A for 1ms and a clamp energy of 3.4mJ at 15V gate drive. It meets international standard packaging requirements and is qualified for use in power inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protection circuits.

Suppliers

Company
Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYP30N120A4 - Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXYP30N120A4
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYP30N120A4
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYP30N120A4
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
Unlock Full Specs
to access all available technical data