Littelfuse, Inc. Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA225RF1200TSF MIXA225RF1200TSF

Description
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA225RF1200TSF
Description
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA225RF1200TSF
Datasheet
Datasheet Summary
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The MIXA225RF1200TSF is an obsolete IGBT module for boost chopper and brake applications, integrating an IGBT and free-wheeling diodes with an NTC temperature sensor. It uses the SimBus F package, 17 mm high, with a copper baseplate and DCB isolation. The IGBT supports 1200 V collector-emitter voltage and 360 A collector current at 25°C, with a saturation voltage of 1.8 V at 225 A. The boost diode has a 265 A forward current at 25°C and 1200 V reverse voltage. It is short-circuit rated for 10 µs and features a reverse bias safe operating area at 3x Ic. Thermal resistance is 0.115 K/W for the IGBT and 0.145 K/W for the diode. The NTC resistance is 5 kΩ at 25°C with a B coefficient of 3375 K. The module is RoHS compliant and has 3000 V RMS isolation. Total gate charge is 690 nC.

Datasheet Summary
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The MIXA225RF1200TSF is an obsolete IGBT module for boost chopper and brake applications, integrating an IGBT and free-wheeling diodes with an NTC temperature sensor. It uses the SimBus F package, 17 mm high, with a copper baseplate and DCB isolation. The IGBT supports 1200 V collector-emitter voltage and 360 A collector current at 25°C, with a saturation voltage of 1.8 V at 225 A. The boost diode has a 265 A forward current at 25°C and 1200 V reverse voltage. It is short-circuit rated for 10 µs and features a reverse bias safe operating area at 3x Ic. Thermal resistance is 0.115 K/W for the IGBT and 0.145 K/W for the diode. The NTC resistance is 5 kΩ at 25°C with a B coefficient of 3375 K. The module is RoHS compliant and has 3000 V RMS isolation. Total gate charge is 690 nC.

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Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA225RF1200TSF - MIXA225RF1200TSF - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA225RF1200TSF
MIXA225RF1200TSF
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA225RF1200TSF MIXA225RF1200TSF
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA225RF1200TSF

Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA225RF1200TSF

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Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number MIXA225RF1200TSF
Product Name Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA225RF1200TSF
VCES 1200 volts
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