The MIXA225RF1200TSF is an obsolete IGBT module for boost chopper and brake applications, integrating an IGBT and free-wheeling diodes with an NTC temperature sensor. It uses the SimBus F package, 17 mm high, with a copper baseplate and DCB isolation. The IGBT supports 1200 V collector-emitter voltage and 360 A collector current at 25°C, with a saturation voltage of 1.8 V at 225 A. The boost diode has a 265 A forward current at 25°C and 1200 V reverse voltage. It is short-circuit rated for 10 µs and features a reverse bias safe operating area at 3x Ic. Thermal resistance is 0.115 K/W for the IGBT and 0.145 K/W for the diode. The NTC resistance is 5 kΩ at 25°C with a B coefficient of 3375 K. The module is RoHS compliant and has 3000 V RMS isolation. Total gate charge is 690 nC.
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA225RF1200TSF
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | MIXA225RF1200TSF |
| Product Name | Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA225RF1200TSF |
| VCES | 1200 volts |